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71V124 Series

3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout

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3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout

PartMemory FormatOperating Temperature [Max]Operating Temperature [Min]Memory OrganizationMemory InterfaceTechnologyMemory SizeMemory TypeAccess TimeVoltage - Supply [Max]Voltage - Supply [Min]Mounting TypeSupplier Device PackageWrite Cycle Time - Word, PagePackage / Case [x]Package / Case [y]Package / CasePackage / CasePackage / CasePackage / Case
Renesas Electronics Corporation
SRAM
70 °C
0 °C
128K x 8
Parallel
SRAM - Asynchronous
1 Mbit
Volatile
15 ns
3.6 V
3 V
Surface Mount
32-TSOP II
15 ns
0.4 in
10.16 mm
32-SOIC
Renesas Electronics Corporation
SRAM
85 °C
-40 °C
128K x 8
Parallel
SRAM - Asynchronous
1 Mbit
Volatile
12 ns
3.6 V
3 V
Surface Mount
32-SOJ
12 ns
32-BSOJ
0.3 in
7.62 mm
Renesas Electronics Corporation
SRAM
85 °C
-40 °C
128K x 8
Parallel
SRAM - Asynchronous
1 Mbit
Volatile
12 ns
3.6 V
3 V
Surface Mount
32-SOJ
12 ns
32-BSOJ
0.3 in
7.62 mm
Renesas Electronics Corporation
SRAM
85 °C
-40 °C
128K x 8
Parallel
SRAM - Asynchronous
1 Mbit
Volatile
10 ns
3.6 V
3.15 V
Surface Mount
32-TSOP II
10 ns
0.4 in
10.16 mm
32-SOIC
Renesas Electronics Corporation
SRAM
70 °C
0 °C
128K x 8
Parallel
SRAM - Asynchronous
1 Mbit
Volatile
15 ns
3.6 V
3 V
Surface Mount
32-TSOP II
15 ns
0.4 in
10.16 mm
32-SOIC
Renesas Electronics Corporation
SRAM
85 °C
-40 °C
128K x 8
Parallel
SRAM - Asynchronous
1 Mbit
Volatile
10 ns
3.6 V
3.15 V
Surface Mount
32-TSOP II
10 ns
0.4 in
10.16 mm
32-SOIC
Renesas Electronics Corporation
SRAM
85 °C
-40 °C
128K x 8
Parallel
SRAM - Asynchronous
1 Mbit
Volatile
15 ns
3.6 V
3 V
Surface Mount
32-TSOP II
15 ns
0.4 in
10.16 mm
32-SOIC
Renesas Electronics Corporation
SRAM
70 °C
0 °C
128K x 8
Parallel
SRAM - Asynchronous
1 Mbit
Volatile
15 ns
3.6 V
3 V
Surface Mount
32-SOJ
15 ns
32-BSOJ
10.16 mm
10.16 mm
Renesas Electronics Corporation
SRAM
70 °C
0 °C
128K x 8
Parallel
SRAM - Asynchronous
1 Mbit
Volatile
10 ns
3.6 V
3.15 V
Surface Mount
32-SOJ
10 ns
32-BSOJ
0.3 in
7.62 mm
Renesas Electronics Corporation
SRAM
85 °C
-40 °C
128K x 8
Parallel
SRAM - Asynchronous
1 Mbit
Volatile
12 ns
3.6 V
3 V
Surface Mount
32-SOJ
12 ns
32-BSOJ
10.16 mm
10.16 mm

Description

AI
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.