71V124SA10PHGI8

Obsolete

Renesas Electronics Corporation

3.3V 128K X 8 ASYNCHRONOUS STATIC RAM CENTER POWER & GROUND PINOUT

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Documents71V124SA Datasheet Datasheet

71V124SA10PHGI8

Obsolete

Renesas Electronics Corporation

3.3V 128K X 8 ASYNCHRONOUS STATIC RAM CENTER POWER & GROUND PINOUT

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Documents71V124SA Datasheet Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	71V124SA10PHGI8

Access Time	10 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	128K x 8
Memory Size	1 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	32-SOIC
Package / Case [x]	0.4 in
Package / Case [y]	10.16 mm
Supplier Device Package	32-TSOP II
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	3.15 V
Write Cycle Time - Word, Page	10 ns

71V124 Series

3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout

Part	Memory Format	Operating Temperature [Max]	Operating Temperature [Min]	Memory Organization	Memory Interface	Technology	Memory Size	Memory Type	Access Time	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Supplier Device Package	Write Cycle Time - Word, Page	Package / Case [x]	Package / Case [y]	Package / Case	Package / Case	Package / Case	Package / Case
Renesas Electronics Corporation 71V124SA15PHG	SRAM	70 °C	0 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	15 ns	3.6 V	3 V	Surface Mount	32-TSOP II	15 ns	0.4 in	10.16 mm	32-SOIC
Renesas Electronics Corporation 71V124SA12TYGI	SRAM	85 °C	-40 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	12 ns	3.6 V	3 V	Surface Mount	32-SOJ	12 ns			32-BSOJ	0.3 in 7.62 mm
Renesas Electronics Corporation 71V124SA12TYGI8	SRAM	85 °C	-40 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	12 ns	3.6 V	3 V	Surface Mount	32-SOJ	12 ns			32-BSOJ	0.3 in 7.62 mm
Renesas Electronics Corporation 71V124SA10PHGI	SRAM	85 °C	-40 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	10 ns	3.6 V	3.15 V	Surface Mount	32-TSOP II	10 ns	0.4 in	10.16 mm	32-SOIC
Renesas Electronics Corporation 71V124SA15PHG8	SRAM	70 °C	0 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	15 ns	3.6 V	3 V	Surface Mount	32-TSOP II	15 ns	0.4 in	10.16 mm	32-SOIC
Renesas Electronics Corporation 71V124SA10PHGI8	SRAM	85 °C	-40 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	10 ns	3.6 V	3.15 V	Surface Mount	32-TSOP II	10 ns	0.4 in	10.16 mm	32-SOIC
Renesas Electronics Corporation 71V124SA15PHGI	SRAM	85 °C	-40 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	15 ns	3.6 V	3 V	Surface Mount	32-TSOP II	15 ns	0.4 in	10.16 mm	32-SOIC
Renesas Electronics Corporation 71V124SA15YG	SRAM	70 °C	0 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	15 ns	3.6 V	3 V	Surface Mount	32-SOJ	15 ns			32-BSOJ		10.16 mm	10.16 mm
Renesas Electronics Corporation 71V124SA10TYG	SRAM	70 °C	0 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	10 ns	3.6 V	3.15 V	Surface Mount	32-SOJ	10 ns			32-BSOJ	0.3 in 7.62 mm
Renesas Electronics Corporation 71V124SA12YGI	SRAM	85 °C	-40 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	12 ns	3.6 V	3 V	Surface Mount	32-SOJ	12 ns			32-BSOJ		10.16 mm	10.16 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71V124 Series

The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Documents

Technical documentation and resources

71V124SA Datasheet

Datasheet