G05NP06S2

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Goford Semiconductor

MOSFET N/P-CH 60V 5A/3.1A 8SOP

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Goford Semiconductor

MOSFET N/P-CH 60V 5A/3.1A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	G05NP06S2

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	5 A
Current - Continuous Drain (Id) @ 25°C	3.1 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	37 nC
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1336 pF, 1454 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.9 W, 2.5 W
Rds On (Max) @ Id, Vgs	80 mOhm, 36 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V, 2 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Configuration	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]
Goford Semiconductor G05N06S2	Surface Mount	26 nC	35 mOhm	2 N-Channel	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	5 A	-55 °C	150 °C	1374 pF	2.5 V	60 V	8-SOP	22 nC
Goford Semiconductor G05NP06S2	Surface Mount		36 mOhm 80 mOhm	N and P-Channel	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	5 A	-55 °C	150 °C	1336 pF 1454 pF	2 V 2.2 V	60 V	8-SOP	22 nC	37 nC	3.1 A	1.9 W 2.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 5A (Tc), 3.1A (Tc) 2.5W (Tc), 1.9W (Tc) Surface Mount 8-SOP

Technical documentation and resources