G3R75MT12K

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GeneSiC Semiconductor

TO-247-4 SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS

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GeneSiC Semiconductor

TO-247-4 SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	G3R75MT12K

Current - Continuous Drain (Id) @ 25°C	41 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1560 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	207 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	TO-247-4
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	2.69 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Min]	Vgs (Max) [Max]	Vgs (Max)
GeneSiC Semiconductor G3R75MT12K	TO-247-4	1200 V	Through Hole	15 V	90 mOhm	54 nC	1560 pF	2.69 V	207 W	N-Channel	TO-247-4	-55 °C	175 ░C	41 A	-10 V	22 V
GeneSiC Semiconductor G3R75MT12J	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	1200 V	Surface Mount	15 V	90 mOhm	54 nC	1560 pF	2.69 V	224 W	N-Channel	TO-263-7	-55 °C	175 ░C	42 A			15 V

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General part information

N-Channel 1200 V 41A (Tc) 207W (Tc) Through Hole TO-247-4

Technical documentation and resources