G3R75MT12J

Obsolete

GeneSiC Semiconductor

SIC MOSFET N-CH 42A TO263-7

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Obsolete

GeneSiC Semiconductor

SIC MOSFET N-CH 42A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	G3R75MT12J

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1560 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)	224 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	TO-263-7
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2.69 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Min]	Vgs (Max) [Max]	Vgs (Max)
GeneSiC Semiconductor G3R75MT12K	TO-247-4	1200 V	Through Hole	15 V	90 mOhm	54 nC	1560 pF	2.69 V	207 W	N-Channel	TO-247-4	-55 °C	175 ░C	41 A	-10 V	22 V
GeneSiC Semiconductor G3R75MT12J	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	1200 V	Surface Mount	15 V	90 mOhm	54 nC	1560 pF	2.69 V	224 W	N-Channel	TO-263-7	-55 °C	175 ░C	42 A			15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 11.03

General part information

N-Channel 1200 V 42A (Tc) 224W (Tc) Surface Mount TO-263-7

Technical documentation and resources