G3R75 Series

Catalog

TO-247-4 SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS

Part	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Min]	Vgs (Max) [Max]	Vgs (Max)
GeneSiC Semiconductor G3R75MT12K	TO-247-4	1200 V	Through Hole	15 V	90 mOhm	54 nC	1560 pF	2.69 V	207 W	N-Channel	TO-247-4	-55 °C	175 ░C	41 A	-10 V	22 V
GeneSiC Semiconductor G3R75MT12J	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	1200 V	Surface Mount	15 V	90 mOhm	54 nC	1560 pF	2.69 V	224 W	N-Channel	TO-263-7	-55 °C	175 ░C	42 A			15 V