SCS210AMC

LTB

Rohm Semiconductor

DIODE SIL CARB 650V 10A TO220FM

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LTB

Rohm Semiconductor

DIODE SIL CARB 650V 10A TO220FM

Technical Specifications

Parameters and characteristics for this part

Specification	SCS210AMC

Capacitance @ Vr, F	365 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220FM
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.55 V

1200V, 10A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Package / Case	Operating Temperature - Junction	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Diode Configuration	Reverse Recovery Time (trr)	Technology	Mounting Type	Current - Average Rectified (Io)	Capacitance @ Vr, F	Operating Temperature - Junction [Max]
Rohm Semiconductor SCS210KE2HRC11	1.2 kV	No Recovery Time	TO-247-3	175 °C	5 A	TO-247	1.6 V	100 µA	1 Pair Common Cathode	0 ns	SiC (Silicon Carbide) Schottky	Through Hole
Rohm Semiconductor SCS210AMC	650 V	No Recovery Time	TO-220-2			TO-220FM	1.55 V	200 µA		0 ns	SiC (Silicon Carbide) Schottky	Through Hole	10 A	365 pF	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.50

General part information

Switching loss reduced, enabling high-speed switching . (3-pin package)

Technical documentation and resources