1200V, 10A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive
1200V, 10A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive
1200V, 10A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Package / Case | Operating Temperature - Junction | Current - Average Rectified (Io) (per Diode) | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Diode Configuration | Reverse Recovery Time (trr) | Technology | Mounting Type | Current - Average Rectified (Io) | Capacitance @ Vr, F | Operating Temperature - Junction [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 1.2 kV | No Recovery Time | TO-247-3 | 175 °C | 5 A | TO-247 | 1.6 V | 100 µA | 1 Pair Common Cathode | 0 ns | SiC (Silicon Carbide) Schottky | Through Hole | |||
Rohm Semiconductor | 650 V | No Recovery Time | TO-220-2 | TO-220FM | 1.55 V | 200 µA | 0 ns | SiC (Silicon Carbide) Schottky | Through Hole | 10 A | 365 pF | 175 °C |