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Wolfspeed

Series List(118)

SeriesCategory# PartsStatusDescription

Standalone parts(115)

...
PartVoltage - Forward (Vf) (Max) @ IfCurrent - Average Rectified (Io)Reverse Recovery Time (trr)Capacitance @ Vr, FMounting TypeSpeedTechnologyVoltage - DC Reverse (Vr) (Max) [Max]Package / CaseSupplier Device PackageOperating Temperature - Junction [Max]Operating Temperature - Junction [Min]Current - Reverse Leakage @ VrDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsOperating Temperature [Min]Operating Temperature [Max]Power Dissipation (Max) [Max]Current - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdGradeInput Capacitance (Ciss) (Max) @ VdsQualificationVgs (Max) [Max]Vgs (Max) [Min]FET TypeGate Charge (Qg) (Max) @ VgsDiode ConfigurationCurrent - Average Rectified (Io) (per Diode)Utilized IC / PartSupplied ContentsContentsFunctionTypeSpeedPower Dissipation (Max)Gate Charge (Qg) (Max) @ Vgs [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]
Wolfspeed
1.8 V
10 A
0 ns
340 pF
Surface Mount
No Recovery Time
SiC (Silicon Carbide) Schottky
600 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
TO-263-2
175 ░C
-55 C
200 µA
Wolfspeed
Through Hole
TO-247-3
TO-247-3
900 V
15 V
364 mOhm
-55 °C
150 °C
54 W
11.5 A
3.5 V
Automotive
150 pF
AEC-Q101
18 V
-8 V
N-Channel
9.5 nC
Wolfspeed
1.8 V
0 ns
Through Hole
No Recovery Time
SiC (Silicon Carbide) Schottky
1.2 kV
TO-247-3
TO-247-3
175 ░C
-55 C
150 µA
1 Pair Common Cathode
9 A
19 A
Wolfspeed
CAS300M17BM2
Board(s)
Board(s)
Gate Driver
Power Management
Wolfspeed
1.8 V
24 A
26 pF
Surface Mount
SiC (Silicon Carbide) Schottky
600 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
TO-263-2
175 ░C
-55 C
50 µA
200 mA
500 ns
Wolfspeed
1.8 V
54.5 A
0 ns
1500 pF
Through Hole
No Recovery Time
SiC (Silicon Carbide) Schottky
1.2 kV
TO-220-2
TO-220-2
175 ░C
-55 C
200 µA
Automotive
AEC-Q101
Wolfspeed
1.8 V
8 A
0 ns
120 pF
Surface Mount
No Recovery Time
SiC (Silicon Carbide) Schottky
650 V
DPAK (2 Leads + Tab)
SC-63
TO-252-3
TO-252-2
175 ░C
-55 C
50 µA
Surface Mount
D2PAK (7 Leads + Tab)
TO-263-8
TO-263CA
TO-263-7
1200 V
15 V
-40 C
175 °C
68 A
3.6 V
3424 pF
19 V
-8 V
N-Channel
277 W
111 nC
Wolfspeed
Through Hole
SiC (Silicon Carbide Junction Transistor)
TO-247-4
TO-247-4L
1200 V
15 V
97.5 mOhm
-40 C
175 °C
145 W
32 A
3.8 V
19 V
-8 V
N-Channel
55 nC
1480 pF
C3M0065090J
Board(s)
MOSFET
Power Management