C3M0075120K1

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MOSFET N-CH 1200V 32A TO247-4L

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MOSFET N-CH 1200V 32A TO247-4L

Technical Specifications

Parameters and characteristics for this part

Specification	C3M0075120K1

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	55 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1480 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	145 W
Rds On (Max) @ Id, Vgs	97.5 mOhm
Supplier Device Package	TO-247-4L
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]	19 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	3.8 V

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General part information

N-Channel 1200 V 32A (Tc) 145W (Tc) Through Hole TO-247-4L

Technical documentation and resources