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Renesas Electronics Corporation

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(13635)

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Part	Program Memory Size	Number of I/O	Core Processor	Qualification	Peripherals	RAM Size	Core Size	Voltage - Supply (Vcc/Vdd) [Max]	Voltage - Supply (Vcc/Vdd) [Min]	Mounting Type	Speed	Supplier Device Package	Grade	Oscillator Type	Package / Case	Data Converters	EEPROM Size	Program Memory Type	Operating Temperature [Max]	Operating Temperature [Min]	Connectivity	Current Transfer Ratio (Min) [Min]	Current Transfer Ratio (Max)	Output Type	Current - Output / Channel	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Channels	Current - DC Forward (If) (Max) [Max]	Voltage - Forward (Vf) (Typ)	Vce Saturation (Max) [Max]	Input Type	Package / Case [x]	Package / Case [y]	Voltage - Supply [Min]	Voltage - Supply [Max]	Type	Features	Interface	Current - Timekeeping (Max) [Max]	Current - Timekeeping (Max) [Min]	Voltage - Supply, Battery [Min]	Voltage - Supply, Battery [Max]	Time Format	Data Converters [custom]	Data Converters [custom]	Data Converters [custom]	Differential - Input:Output	Output	Number of Circuits	PLL	Ratio - Input:Output [custom]	Ratio - Input:Output [custom]	Divider/Multiplier	Package / Case	Package / Case [custom]	Input	Core Size [Min]	Core Size [Max]
Renesas Electronics Corporation R7F7016933AFP-C#BA1	1 MB	33 I/O	RH850G3KH	AEC-Q100	DMA PWM WDT	128 K	32-Bit Single-Core	5.5 V	3 V	Surface Mount	120 MHz	48-LFQFP	Automotive	Internal	48-QFP	4x10b 8x12b	64 K	FLASH	105 °C	-40 °C
Renesas Electronics Corporation R7F100GFF2DFP#UA0	96 KB	37	RL78		LVD POR PWM WDT	12 K	16-Bit	5.5 V	1.6 V	Surface Mount	32 MHz	44-LQFP (10x10)		Internal	44-LQFP	10b 12b A/D 10x8 D/A 2x8b	8 K	FLASH	85 °C	-40 °C	CSI I2C LINbus SPI UART/USART
Renesas Electronics Corporation PS2561L-1-V-F3-W-A										Surface Mount		4-SMD			4-SMD Gull Wing				100 °C	-55 °C		130 %	260 %	1.81 mOhm	50 mA	5 µs	3 µs	1	80 mA	1.17 V	300 mV	DC
Renesas Electronics Corporation ZSPM1000ZA1R1
Renesas Electronics Corporation X1228S14-2.7										Surface Mount					14-SOIC				70 °C	0 °C													0.154 in	3.9 mm	2.7 V	5.5 V	Clock/Calendar	Alarm Leap Year Supervisor Watchdog Timer	2-Wire Serial I2C	20 µA	10 µA	1.8 V	5.5 V	HH:MM:SS (12/24 hr)
Renesas Electronics Corporation R5F526T9BDFP#30	128 KB	82	RXv3		DMA LVD POR PWM WDT	64 K	32-Bit	5.5 V	2.7 V	Surface Mount	120 MHz	100-LFQFP (14x14)		Internal	100-LQFP	A/D 22x12b D/A 2x12b	16 K	FLASH	85 °C	-40 °C	CANbus I2C SCI SPI UART/USART
Renesas Electronics Corporation R5F104FJAFP#V0	256 KB	31	RL78		DMA LVD POR PWM WDT	24 K	16-Bit	5.5 V	1.6 V	Surface Mount	32 MHz	44-LQFP (10x10)		Internal	44-LQFP		8 K	FLASH	85 °C	-40 °C	CSI I2C LINbus UART/USART																								2x8b	10x8	10b
Renesas Electronics Corporation MK1493-03BGILFTR										Surface Mount		48-TSSOP			48-TFSOP				85 °C	-40 °C															3.15 V	3.45 V	Clock Generator											No/Yes	Clock	1		14	22	Yes/No	0.24 in	6.1 mm	Clock Crystal
Renesas Electronics Corporation HS04ALKCU01SR
Renesas Electronics Corporation R5F64179PFD#2B	1 MB	120	R32C/100		DMA LVD PWM WDT	63 K		5.5 V	3 V	Surface Mount	50 MHz	144-LFQFP (20x20)		Internal	144-LQFP	A/D 34x10b D/A 2x8b	8 K	FLASH	85 °C	-40 °C	CANbus EBI/EMI I2C IEBus UART/USART																																					16 Bit	32 Bit

Series	Category	# Parts	Status	Description

Renesas Electronics Corporation71V35573.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O	Memory	17	1	The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3557 contains address, data-in... Read More
Renesas Electronics Corporation71V35583.3V 256K x 18 ZBT Synchronous Pipelined SRAM with 3.3V I/O	Integrated Circuits (ICs)	14	1	The 71V3558 3.3V CMOS synchronous SRAM, organized as 256K x 18, is designed to eliminate dead bus cycles when turning the bus around between reads and writes or writes and reads. Thus, it has been given the name ZBT™, or Zero Bus Turnaround. The 71V3558 contains data I/O, address, and... Read More
Renesas Electronics Corporation71V35593.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O	Integrated Circuits (ICs)	22	8	The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3559 contains address, data-in... Read More
Renesas Electronics Corporation71V35763.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O	Integrated Circuits (ICs)	7	1	The 71V3576 3.3V CMOS SRAM is organized as 128K x 36. The 71V3576 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the... Read More
Renesas Electronics Corporation71V35761S3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O	Integrated Circuits (ICs)	47	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.
Renesas Electronics Corporation71V35773.3V 128K x 36 Synchronous Flowthrough SRAM with 3.3V I/O	Memory	29	1	The 71V3577 3.3V CMOS SRAM is organized as 128K x 36 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.
Renesas Electronics Corporation71V3578	Memory	6	1
Renesas Electronics Corporation71V35793.3V 256K x 18 Synchronous Flow-Through SRAM with 3.3V I/O	Memory	8	1	The 71V3579 3.3V CMOS SRAM is organized as 256K x 18 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.
Renesas Electronics Corporation71V416S3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout	Memory	46	1	The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Renesas Electronics Corporation71V416Y	Memory	2	8