71V3576 Series

3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O

Manufacturer: Renesas Electronics Corporation

Catalog

3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O

Part	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Memory Organization	Technology	Supplier Device Package	Memory Format	Mounting Type	Memory Type	Memory Size	Access Time	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Interface	Clock Frequency
Renesas Electronics Corporation 71V3576S133PFG	70 °C	0 °C	100-LQFP	128K x 36	SRAM - Synchronous SDR	100-TQFP (14x14)	SRAM	Surface Mount	Volatile	4.5 Mbit	4.2 ns	3.465 V	3.135 V	Parallel	133 MHz
Renesas Electronics Corporation 71V3576S133PFGI	85 °C	-40 °C	100-LQFP	128K x 36	SRAM - Synchronous SDR	100-TQFP (14x14)	SRAM	Surface Mount	Volatile	4.5 Mbit	4.2 ns	3.465 V	3.135 V	Parallel	133 MHz
Renesas Electronics Corporation 71V3576S150PFGI	85 °C	-40 °C	100-LQFP	128K x 36	SRAM - Synchronous SDR	100-TQFP (14x14)	SRAM	Surface Mount	Volatile	4.5 Mbit	3.8 ns	3.465 V	3.135 V	Parallel	150 MHz
Renesas Electronics Corporation 71V3576S133PFG8	70 °C	0 °C	100-LQFP	128K x 36	SRAM - Synchronous SDR	100-TQFP (14x14)	SRAM	Surface Mount	Volatile	4.5 Mbit	4.2 ns	3.465 V	3.135 V	Parallel	133 MHz
Renesas Electronics Corporation 71V3576S150PFGI8	85 °C	-40 °C	100-LQFP	128K x 36	SRAM - Synchronous SDR	100-TQFP (14x14)	SRAM	Surface Mount	Volatile	4.5 Mbit	3.8 ns	3.465 V	3.135 V	Parallel	150 MHz
Renesas Electronics Corporation 71V3576S150PFG8	70 °C	0 °C	100-LQFP	128K x 36	SRAM - Synchronous SDR	100-TQFP (14x14)	SRAM	Surface Mount	Volatile	4.5 Mbit	3.8 ns	3.465 V	3.135 V	Parallel	150 MHz
Renesas Electronics Corporation 71V3576S133PFGI8	85 °C	-40 °C	100-LQFP	128K x 36	SRAM - Synchronous SDR	100-TQFP (14x14)	SRAM	Surface Mount	Volatile	4.5 Mbit	4.2 ns	3.465 V	3.135 V	Parallel	133 MHz

Catalog

3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O

Description

The 71V3576 3.3V CMOS SRAM is organized as 128K x 36. The 71V3576 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.