71V3579 Series

3.3V 256K x 18 Synchronous Flow-Through SRAM with 3.3V I/O

Manufacturer: Renesas Electronics Corporation

Catalog

3.3V 256K x 18 Synchronous Flow-Through SRAM with 3.3V I/O

Part	Memory Organization	Technology	Memory Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Memory Size	Supplier Device Package	Memory Format	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Clock Frequency	Access Time
Renesas Electronics Corporation 71V3579S85PFG	256K x 18	SRAM - Synchronous SDR	Volatile	70 °C	0 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	87 MHz
Renesas Electronics Corporation 71V3579S80PFG8	256K x 18	SRAM - Synchronous SDR	Volatile	70 °C	0 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	100 MHz	8 ns
Renesas Electronics Corporation 71V3579S85PFGI	256K x 18	SRAM - Synchronous SDR	Volatile	85 °C	-40 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	87 MHz
Renesas Electronics Corporation 71V3579S75PFGI	256K x 18	SRAM - Synchronous SDR	Volatile	85 °C	-40 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	117 MHz	7.5 ns
Renesas Electronics Corporation 71V3579S75PFG	256K x 18	SRAM - Synchronous SDR	Volatile	70 °C	0 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	117 MHz	7.5 ns
Renesas Electronics Corporation 71V3579S80PFGI	256K x 18	SRAM - Synchronous SDR	Volatile	85 °C	-40 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	100 MHz	8 ns
Renesas Electronics Corporation 71V3579S75PFGI8	256K x 18	SRAM - Synchronous SDR	Volatile	85 °C	-40 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	117 MHz	7.5 ns
Renesas Electronics Corporation 71V3579S80PFGI8	256K x 18	SRAM - Synchronous SDR	Volatile	85 °C	-40 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	100 MHz	8 ns

Catalog

3.3V 256K x 18 Synchronous Flow-Through SRAM with 3.3V I/O

Description

The 71V3579 3.3V CMOS SRAM is organized as 256K x 18 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.