NovuSem

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Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Package / Case	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)
NovuSem NC1M120C75RRNG	-55 °C	150 °C	75 mOhm	Surface Mount	N-Channel	1402 pF	1200 V	TO-263-7L	2.3 V	18 V	-5 V	46 A	18 V	240 W
NovuSem NC1D120C10ATNG				Through Hole				TO-220-2L							1.6 V	SiC (Silicon Carbide) Schottky	10 A	1.2 kV	670 pF	TO-220-2	35 µA	No Recovery Time	175 ░C	-55 C	0 ns
NovuSem NC1M120C75HTNG	-55 °C	175 ░C		Through Hole	N-Channel	1450 pF	1200 V	TO-247-4L	2.8 V	20 V	-5 V	47 A		288 W						TO-247-4