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NC1M120C75HTNG - NC1M120C12HTNG

NC1M120C75HTNG

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NovuSem

SIC MOSFET N 1200V 75MOHM 47A 4

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NC1M120C75HTNG - NC1M120C12HTNG

NC1M120C75HTNG

Active
NovuSem

SIC MOSFET N 1200V 75MOHM 47A 4

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNC1M120C75HTNG
Current - Continuous Drain (Id) @ 25°C47 A
Drain to Source Voltage (Vdss)1200 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]1450 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-4
Power Dissipation (Max)288 W
Supplier Device PackageTO-247-4L
Vgs (Max) [Max]20 V
Vgs (Max) [Min]-5 V
Vgs(th) (Max) @ Id2.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 50$ 12.85

Description

General part information

NC1M120C75HTNG

N-Channel 1200 V 47A (Tc) 288W (Ta) Through Hole TO-247-4L

Documents

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