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Microsemi Corporation
Standalone parts(1832)
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| Part | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Technology | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Collector Emitter Breakdown (Max) | Operating Temperature | Frequency - Transition [Min] | Frequency - Transition [Max] | Gain | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Transistor Type | Vce(on) (Max) @ Vge, Ic | Input Capacitance (Cies) @ Vce | Input | NTC Thermistor | Current - Collector Cutoff (Max) [Max] | IGBT Type | Configuration | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Peak Pulse (10/1000µs) | Grade | Applications | Qualification | Power - Peak Pulse | Unidirectional Channels [custom] | Voltage - Reverse Standoff (Typ) | Power Line Protection | Type | Voltage - Clamping (Max) @ Ipp [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) [Max] | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Tolerance | Bidirectional Channels [custom] | Power - Peak Pulse | Voltage - Breakdown (Min) [Min] | w/LED Driver | w/Supervisor | Topology | Voltage - Supply [Max] | Voltage - Supply [Min] | Voltage/Current - Output 2 | Number of Outputs | Voltage/Current - Output 1 | w/Sequencer | Frequency - Switching [Max] | Frequency - Switching [Min] | Capacitance @ Frequency | Unidirectional Channels |
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Microsemi Corporation | 25 W 800 mW | 6.34 nC | N-Channel | 20 V | 10 V | TO-205AF Metal Can | 180 mOhm | Through Hole | 4 V | 100 V | 8 A | MOSFET (Metal Oxide) | TO-39 | -55 °C | 150 °C | ||||||||||||||||||||||||||||||||||||||||||||||||
Microsemi Corporation | M135 | Chassis Mount | M135 | 35 V | 200 °C | 118 MHz | 136 MHz | 8.4 dBi | 1 A | 15 W | NPN | ||||||||||||||||||||||||||||||||||||||||||||||||||||
Microsemi Corporation | SP3 | Chassis Mount | SP3 | -40 C | 175 °C | 110 A | 385 W | 2.2 V | 4.4 nF | Standard | 250 µA | Trench Field Stop | Asymmetrical Bridge | 1200 V | |||||||||||||||||||||||||||||||||||||||||||||||||
Microsemi Corporation | Axial DO-204AL DO-41 | Through Hole | DO-204AL (DO-41) | -65 °C | 150 °C | 19.2 A | Military | General Purpose | MIL-PRF-19500 | 500 W | 1 | 16 V | Zener | 26 V | |||||||||||||||||||||||||||||||||||||||||||||||||
Microsemi Corporation | TO-205AD TO-39-3 Metal Can | Through Hole | TO-39 | 1 GHz | 1.4 GHz | 14 dBi | 400 mA | 3.5 W | PNP | 70 V | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
Microsemi Corporation | T-18 Axial | Through Hole | T-18 | -65 ░C | 150 °C | 5 W | 91 V | 75 Ohms | 500 nA | 1.2 V | 5 % | ||||||||||||||||||||||||||||||||||||||||||||||||||||
Microsemi Corporation | Nonstandard SMD | Surface Mount | PLAD | -55 °C | 150 °C | 74.8 A | Military | General Purpose | MIL-PRF-19500 | 6500 W | 54 V | Zener | 87.1 V | 1 | 6.5 kW | 60 V | |||||||||||||||||||||||||||||||||||||||||||||||
Microsemi Corporation | 16-WFQFN Exposed Pad | Surface Mount | 16-MLPQ (3x3) | 0 °C | 70 °C | Linear (LDO) (1) Step-Down (Buck) Synchronous (1) | 16 V | 10 VDC | Controller | 2 | Controller | 2 MHz | 200 kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||
Microsemi Corporation | Nonstandard SMD | Surface Mount | Mini-PLAD | -55 °C | 150 °C | 25.1 A | Military | General Purpose | MIL-PRF-19500 | 6500 W | 1 | 160 V | Zener | 259 V | 6.5 kW | 178 V | |||||||||||||||||||||||||||||||||||||||||||||||
Microsemi Corporation | SC-59 SOT-23-3 TO-236-3 | Surface Mount | SOT-23 | -55 °C | 150 °C | 5 A | General Purpose | 300 W | 12 V | Zener | 19 V | 13.3 V | 80 pF 160 pF | 2 |