2N6796
ObsoleteMicrosemi Corporation
MOSFET N-CH 100V 8A TO39
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Search across all available documentation for this part.
2N6796
ObsoleteMicrosemi Corporation
MOSFET N-CH 100V 8A TO39
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N6796 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6.34 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-205AF Metal Can |
| Power Dissipation (Max) | 800 mW, 25 W |
| Rds On (Max) @ Id, Vgs | 180 mOhm |
| Supplier Device Package | TO-39 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
2N6796
N-Channel 100 V 8A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39
Documents
Technical documentation and resources
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