Inventchip

Series List(4)

Series	Category	# Parts	Status

InventchipIVCR1401	Power Management (PMIC)	1	1
InventchipIVCR1407	Gate Drivers	1	1
InventchipIVCR2401	Power Management (PMIC)	1	1
InventchipIVCR2405	Gate Drivers	1	1

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max) [Max]	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Vgs (Max) [Min]	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Diode Configuration	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Technology	Current - Reverse Leakage @ Vr	Power Dissipation (Max)	Voltage - Forward (Vf) (Max) @ If [Max]
Inventchip IV1Q12050T3	3.2 V	2770 pF	120 nC	TO-247-3	327 W	TO-247-3	N-Channel	1200 V	65 mOhm	Through Hole	-55 °C	175 ░C	58 A	20 V	-5 V
Inventchip IV1D12040U2				TO-247-2		TO-247-2				Through Hole						1.8 V	0 ns	1 Pair Common Cathode	No Recovery Time	1.2 kV	175 ░C	-55 C	102 A	SiC (Silicon Carbide) Schottky	200 µA
Inventchip IV1Q12160T4	2.9 V	885 pF	43 nC	TO-247-4		TO-247-4	N-Channel	1200 V	195 mOhm	Through Hole	-55 °C	175 ░C	20 A	20 V	-5 V											138 W
Inventchip IV1D12030U3				TO-247-3		TO-247-3				Through Hole							0 ns	1 Pair Common Cathode	No Recovery Time	1.2 kV	175 ░C	-55 C	44 A	SiC (Silicon Carbide) Schottky			1.8 V