I
Inventchip
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Power Dissipation (Max) [Max] | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | Vgs (Max) [Min] | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Diode Configuration | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) (per Diode) | Technology | Current - Reverse Leakage @ Vr | Power Dissipation (Max) | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Inventchip | 3.2 V | 2770 pF | 120 nC | TO-247-3 | 327 W | TO-247-3 | N-Channel | 1200 V | 65 mOhm | Through Hole | -55 °C | 175 ░C | 58 A | 20 V | -5 V | ||||||||||||
Inventchip | TO-247-2 | TO-247-2 | Through Hole | 1.8 V | 0 ns | 1 Pair Common Cathode | No Recovery Time | 1.2 kV | 175 ░C | -55 C | 102 A | SiC (Silicon Carbide) Schottky | 200 µA | ||||||||||||||
Inventchip | 2.9 V | 885 pF | 43 nC | TO-247-4 | TO-247-4 | N-Channel | 1200 V | 195 mOhm | Through Hole | -55 °C | 175 ░C | 20 A | 20 V | -5 V | 138 W | ||||||||||||
Inventchip | TO-247-3 | TO-247-3 | Through Hole | 0 ns | 1 Pair Common Cathode | No Recovery Time | 1.2 kV | 175 ░C | -55 C | 44 A | SiC (Silicon Carbide) Schottky | 1.8 V |