IV1Q12160T4
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SIC MOSFET, 1200V 160MOHM, TO-24
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IV1Q12160T4
ActiveInventchip
SIC MOSFET, 1200V 160MOHM, TO-24
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IV1Q12160T4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 43 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 885 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 138 W |
| Rds On (Max) @ Id, Vgs | 195 mOhm |
| Supplier Device Package | TO-247-4 |
| Vgs (Max) [Max] | 20 V |
| Vgs (Max) [Min] | -5 V |
| Vgs(th) (Max) @ Id | 2.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 18.03 | |
| 10 | $ 15.88 | |||
| 100 | $ 13.74 | |||
| 500 | $ 12.45 | |||
Description
General part information
IV1Q12160T4
N-Channel 1200 V 20A (Tc) 138W (Tc) Through Hole TO-247-4
Documents
Technical documentation and resources
No documents available