IV1Q12050T3
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SIC MOSFET, 1200V 50MOHM, TO-247
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IV1Q12050T3
ActiveInventchip
SIC MOSFET, 1200V 50MOHM, TO-247
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IV1Q12050T3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 58 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 120 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2770 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 327 W |
| Rds On (Max) @ Id, Vgs | 65 mOhm |
| Supplier Device Package | TO-247-3 |
| Vgs (Max) [Max] | 20 V |
| Vgs (Max) [Min] | -5 V |
| Vgs(th) (Max) @ Id | 3.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 36.06 | |
| 10 | $ 32.05 | |||
| 100 | $ 28.03 | |||
Description
General part information
IV1Q12050T3
N-Channel 1200 V 58A (Tc) 327W (Tc) Through Hole TO-247-3
Documents
Technical documentation and resources
No documents available