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Global Power Technology-GPT
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Standalone parts(3)
| Part | Technology | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Speed | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Global Power Technology-GPT | SiC (Silicon Carbide) Schottky | 181 pF | 0 ns | TO-220-2 | 175 ░C | -55 C | 11.5 A | TO-220AC | 1.7 V | No Recovery Time | 50 µA | 650 V | Through Hole |
Global Power Technology-GPT | SiC (Silicon Carbide) Schottky | 181 pF | 0 ns | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 175 ░C | -55 C | 11.5 A | TO-252 | 1.7 V | No Recovery Time | 50 µA | 650 V | Surface Mount |
Global Power Technology-GPT | SiC (Silicon Carbide) Schottky | 181 pF | 0 ns | TO-220-2 | 175 ░C | -55 C | 11.5 A | TO-220AC | 1.7 V | No Recovery Time | 50 µA | 650 V | Through Hole |