G3S06503A
ActiveGlobal Power Technology-GPT
DIODE SIC 650V 11.5A TO220AC
Deep-Dive with AI
Search across all available documentation for this part.
G3S06503A
ActiveGlobal Power Technology-GPT
DIODE SIC 650V 11.5A TO220AC
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | G3S06503A |
|---|---|
| Capacitance @ Vr, F | 181 pF |
| Current - Average Rectified (Io) | 11.5 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-220AC |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.51 | |
| 10 | $ 2.29 | |||
| 100 | $ 1.60 | |||
| 500 | $ 1.30 | |||
| 1000 | $ 1.21 | |||
| 2000 | $ 1.13 | |||
Description
General part information
G3S06503A
Diode 650 V 11.5A Through Hole TO-220AC
Documents
Technical documentation and resources
No documents available