G3S06504C
ActiveGlobal Power Technology-GPT
DIODE SIL CARB 650V 11.5A TO252
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G3S06504C
ActiveGlobal Power Technology-GPT
DIODE SIL CARB 650V 11.5A TO252
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | G3S06504C |
|---|---|
| Capacitance @ Vr, F | 181 pF |
| Current - Average Rectified (Io) | 11.5 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-252 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 3.02 | |
| 30 | $ 2.40 | |||
| 120 | $ 2.05 | |||
| 510 | $ 1.83 | |||
| 1020 | $ 1.56 | |||
| 2010 | $ 1.47 | |||
| 5010 | $ 1.41 | |||
Description
General part information
G3S06504C
Diode 650 V 11.5A Surface Mount TO-252
Documents
Technical documentation and resources
No documents available