G3S06504A
ActiveGlobal Power Technology-GPT
DIODE SIC 650V 11.5A TO220AC
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G3S06504A
ActiveGlobal Power Technology-GPT
DIODE SIC 650V 11.5A TO220AC
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | G3S06504A |
|---|---|
| Capacitance @ Vr, F | 181 pF |
| Current - Average Rectified (Io) | 11.5 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-220AC |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.02 | |
| 10 | $ 2.54 | |||
| Tape & Box (TB) | 30 | $ 2.40 | ||
| 90 | $ 2.05 | |||
| 300 | $ 1.94 | |||
| 750 | $ 1.83 | |||
| 1500 | $ 1.56 | |||
| 3000 | $ 1.47 | |||
Description
General part information
G3S06504A
Diode 650 V 11.5A Through Hole TO-220AC
Documents
Technical documentation and resources
No documents available