G
GaNPower
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
GaNPowerGPI6508 | Power Management (PMIC) | 1 | 1 | |
| Part | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Technology | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Vgs (Max) | Input Type | Voltage - Supply (Vcc/Vdd) [Min] | Voltage - Supply (Vcc/Vdd) [Max] | Interface | Output Configuration | Number of Outputs | Voltage - Load | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GaNPower | 39 pF | 1.6 nC | Surface Mount | N-Channel | 6 V | 900 V | GaNFET (Gallium Nitride) | 8-DFN (8x8) | 5 A | 8-DFN | 1.3 V | -55 °C | 150 °C | 320 mOhm | -12 V 7.5 V | |||||||||
GaNPower | 63 pF | 2.1 nC | Surface Mount | N-Channel | 6 V | 650 V | GaNFET (Gallium Nitride) | 8 A | 1.7 V | -55 °C | 150 °C | -12 V 7.5 V | ||||||||||||
GaNPower | 63 pF | 2.1 nC | Surface Mount | N-Channel | 6 V | 650 V | GaNFET (Gallium Nitride) | Die | 8 A | Die | 1.4 V | -55 °C | 150 °C | -12 V 7.5 V | ||||||||||
GaNPower | 60 pF | 2.1 nC | Surface Mount | N-Channel | 6 V | 650 V | GaNFET (Gallium Nitride) | 7 A | 1.5 V | -55 °C | 150 °C | -12 V 7.5 V | ||||||||||||
GaNPower | 420 pF | 16 nC | Surface Mount | N-Channel | 6 V | 650 V | GaNFET (Gallium Nitride) | Die | 60 A | Die | -55 °C | 150 °C | -12 V 7.5 V | |||||||||||
GaNPower | Surface Mount | -55 °C | 150 °C | Non-Inverting | 3 V | 8 V | PWM | High Side | 1 | 650 V | ||||||||||||||
GaNPower | 241 pF | 5.8 nC | Surface Mount | N-Channel | 6 V | 650 V | GaNFET (Gallium Nitride) | 30 A | 1.4 V | -55 °C | 150 °C | -12 V 7.5 V | ||||||||||||
GaNPower | 241 pF | 5.8 nC | Surface Mount | N-Channel | 6 V | 650 V | GaNFET (Gallium Nitride) | Die | 30 A | Die | -55 °C | 150 °C | -12 V 7.5 V | |||||||||||
GaNPower | Surface Mount | N-Channel | 6 V | 650 V | GaNFET (Gallium Nitride) | Die | 5 A | Die | 1.4 V | -55 °C | 150 °C | -12 V 7.5 V | 2.6 nC | 45 pF | ||||||||||
GaNPower | 78 pF | Surface Mount | N-Channel | 6 V | 900 V | GaNFET (Gallium Nitride) | 8-DFN (8x8) | 10 A | 8-DFN | -55 °C | 150 °C | 162 mOhm | -12 V 7.5 V | 2.6 nC |