GPI65005DF

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GaNPower

GANFET N-CH 650V 5A DFN 5X6

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GaNPower

GANFET N-CH 650V 5A DFN 5X6

Technical Specifications

Parameters and characteristics for this part

Specification	GPI65005DF

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	45 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	Die
Supplier Device Package	Die
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	7.5 V, -12 V
Vgs(th) (Max) @ Id	1.4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	1	$ 2.50

General part information

N-Channel 650 V 5A Surface Mount Die

Technical documentation and resources