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GPI90010DF88 - GPI90010DF88

GPI90010DF88

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GaNPower

GANFET N-CH 900V 10A DFN8X8

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GPI90010DF88 - GPI90010DF88

GPI90010DF88

Active
GaNPower

GANFET N-CH 900V 10A DFN8X8

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationGPI90010DF88
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]2.6 nC
Input Capacitance (Ciss) (Max) @ Vds78 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-DFN
Rds On (Max) @ Id, Vgs162 mOhm
Supplier Device Package8-DFN (8x8)
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)7.5 V, -12 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 1$ 6.25

Description

General part information

GPI90010DF88

N-Channel 900 V 10A Surface Mount 8-DFN (8x8)

Documents

Technical documentation and resources