GPI65030TO5L
ActiveGaNPower
GANFET N-CH 650V 30A TO263-5L
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GPI65030TO5L
ActiveGaNPower
GANFET N-CH 650V 30A TO263-5L
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | GPI65030TO5L |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 241 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | 7.5 V, -12 V |
| Vgs(th) (Max) @ Id | 1.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 1 | $ 15.00 | |
Description
General part information
GPI65030TO5L
N-Channel 650 V 30A Surface Mount
Documents
Technical documentation and resources