SCT3080KRHRC15

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Rohm Semiconductor

1200V, 31A, 4-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

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DocumentsBest practices for the connection of Driver Source/Emitter terminals in discrete devices About Flammability of Materials +41

SCT3080KRHRC15

Active

Rohm Semiconductor

1200V, 31A, 4-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

Deep-Dive with AI

DocumentsBest practices for the connection of Driver Source/Emitter terminals in discrete devices About Flammability of Materials +41

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT3080KRHRC15

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC, 18 V
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	785 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	165 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	104 mOhm
Supplier Device Package	TO-247-4L
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	5.6 V

SCT3080KRHR Series

1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Grade	Qualification	Technology
Rohm Semiconductor SCT3080AW7TL	5.6 V	571 pF	TO-263-7	175 °C	48 nC	N-Channel	650 V	29 A	Surface Mount	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	104 mOhm
Rohm Semiconductor SCT3080ARC14	5.6 V	571 pF	TO-247-4L	175 °C	48 nC	N-Channel	650 V	30 A	Through Hole	TO-247-4	104 mOhm	18 V	134 W
Rohm Semiconductor SCT3080ALGC11	5.6 V	571 pF	TO-247N	175 °C	48 nC	N-Channel	650 V	30 A	Through Hole	TO-247-3	104 mOhm	18 V	134 W
Rohm Semiconductor SCT3080KW7TL	5.6 V	785 pF	TO-263-7	175 °C	18 V 60 nC	N-Channel	1200 V	30 A	Surface Mount	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	104 mOhm		159 W
Rohm Semiconductor SCT3080ARHRC15	5.6 V	571 pF	TO-247-4L	175 °C	48 nC	N-Channel	650 V	30 A	Through Hole	TO-247-4	104 mOhm	18 V	134 W	Automotive	AEC-Q101	MOSFET (Metal Oxide)
Rohm Semiconductor SCT3080KRHRC15	5.6 V	785 pF	TO-247-4L	175 °C	18 V 60 nC	N-Channel	1200 V	31 A	Through Hole	TO-247-4	104 mOhm	18 V	165 W	Automotive	AEC-Q101	MOSFET (Metal Oxide)
Rohm Semiconductor SCT3080KRC15	5.6 V	785 pF	TO-247-4L	175 °C	18 V 60 nC	N-Channel	1200 V	31 A	Through Hole	TO-247-4	104 mOhm	18 V	165 W			SiC (Silicon Carbide Junction Transistor)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 14.20
		10	$ 10.05
		450	$ 8.87
Newark	Each	1	$ 16.81
		10	$ 15.27
		25	$ 14.77
		50	$ 14.28
		100	$ 13.78
		250	$ 13.48
		900	$ 13.47

Description

General part information

SCT3080KRHR Series

SCT3080KR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.