TK40P03M1(T6RSS-Q)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 40A DP

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 40A DP

Technical Specifications

Parameters and characteristics for this part

Specification	TK40P03M1(T6RSS-Q)

Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1150 pF
Mounting Type	Surface Mount
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	10.8 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology
Toshiba Semiconductor and Storage TK40P03M1(T6RSS-Q)	2.3 V	30 V	1150 pF	10.8 mOhm	DPAK	17.5 nC	Surface Mount	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	40 A	20 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 40A (Ta) Surface Mount DPAK

Technical documentation and resources