MOSFET N-CH 30V 40A DP
| Part | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2.3 V | 30 V | 1150 pF | 10.8 mOhm | DPAK | 17.5 nC | Surface Mount | 4.5 V 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | 40 A | 20 V | MOSFET (Metal Oxide) |