RSD100N10TL

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Rohm Semiconductor

MOSFET N-CH 100V 10A CPT3

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Rohm Semiconductor

MOSFET N-CH 100V 10A CPT3

Technical Specifications

Parameters and characteristics for this part

Specification	RSD100N10TL

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs [Max]	133 mOhm
Supplier Device Package	CPT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id [Max]	Technology	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Operating Temperature	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Rohm Semiconductor RSD100N10TL	18 nC	10 A	N-Channel	2.5 V	MOSFET (Metal Oxide)	20 V	20 W	700 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	150 °C	133 mOhm	100 V	CPT3	4 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 10A (Ta) 20W (Tc) Surface Mount CPT3

Technical documentation and resources