MOSFET N-CH 100V 10A CPT3
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs(th) (Max) @ Id [Max] | Technology | Vgs (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Mounting Type | Operating Temperature | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 18 nC | 10 A | N-Channel | 2.5 V | MOSFET (Metal Oxide) | 20 V | 20 W | 700 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Surface Mount | 150 °C | 133 mOhm | 100 V | CPT3 | 4 V | 10 V |