HER602G R0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 6A R-6

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 6A R-6

Technical Specifications

Parameters and characteristics for this part

Specification	HER602G R0G

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	R-6, Axial
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	R-6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Mounting Type	Technology	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Speed	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation HER602G R0G	50 ns	10 µA	Through Hole	Standard	6 A	100 V	150 °C	-55 °C	80 pF	200 mA 500 ns	R-6 Axial	R-6	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 6A Through Hole R-6

Technical documentation and resources