DIODE GEN PURP 100V 6A R-6
| Part | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Mounting Type | Technology | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Capacitance @ Vr, F | Speed | Package / Case | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 50 ns | 10 µA | Through Hole | Standard | 6 A | 100 V | 150 °C | -55 °C | 80 pF | 200 mA 500 ns | R-6 Axial | R-6 | 1 V |