2SK3132(Q)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 50A TO3P

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 50A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3132(Q)

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	280 nC
Input Capacitance (Ciss) (Max) @ Vds	11000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3PL
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs [Max]	95 mOhm
Supplier Device Package	TO-3P(L)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.4 V

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Technology
Toshiba Semiconductor and Storage 2SK3132(Q)	50 A	250 W	11000 pF	30 V	500 V	95 mOhm	TO-3P(L)	10 V	Through Hole	150 °C	N-Channel	280 nC	TO-3PL	3.4 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 50A (Tc) 250W (Tc) Through Hole TO-3P(L)

Technical documentation and resources