2SK3132 Series

Catalog

MOSFET N-CH 500V 50A TO3P

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Technology
Toshiba Semiconductor and Storage 2SK3132(Q)	50 A	250 W	11000 pF	30 V	500 V	95 mOhm	TO-3P(L)	10 V	Through Hole	150 °C	N-Channel	280 nC	TO-3PL	3.4 V	MOSFET (Metal Oxide)