SCS315AHGC9

NRND

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 15 A, 37 NC, TO-220ACP, 2 PINS

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NRND

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 15 A, 37 NC, TO-220ACP, 2 PINS

Technical Specifications

Parameters and characteristics for this part

Specification	SCS315AHGC9

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	75 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220ACP
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

Part	Package / Case	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Reverse Recovery Time (trr)
Rohm Semiconductor SCS315AMC	TO-220-2 Full Pack	No Recovery Time	650 V	Through Hole	1.5 V 15 A	TO-220FM	SiC (Silicon Carbide) Schottky	75 µA	175 °C	15 A	0 ns
Rohm Semiconductor SCS315AHGC9	TO-220-2	No Recovery Time	650 V	Through Hole		TO-220ACP	SiC (Silicon Carbide) Schottky	75 µA	175 °C	15 A	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 15A Through Hole TO-220ACP

Technical documentation and resources

No documents available