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PHE13009,127 - TO-220-3

PHE13009,127

Active
WeEn Semiconductors Co., Ltd

TRANS GP BJT NPN 400V 12A 80000MW 3-PIN(3+TAB) TO-220AB RAIL

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PHE13009,127 - TO-220-3

PHE13009,127

Active
WeEn Semiconductors Co., Ltd

TRANS GP BJT NPN 400V 12A 80000MW 3-PIN(3+TAB) TO-220AB RAIL

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPHE13009,127
Current - Collector (Ic) (Max) [Max]12 A
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce8 hFE
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Power - Max [Max]80 W
Supplier Device PackageTO-220AB
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic2 V
Voltage - Collector Emitter Breakdown (Max)400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 6000$ 0.29

Description

General part information

PHE13 Series

Bipolar (BJT) Transistor NPN 400 V 12 A 80 W Through Hole TO-220AB

Documents

Technical documentation and resources

No documents available