PHE13007,127

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WeEn Semiconductors Co., Ltd

TRANS GP BJT NPN 400V 8A 80000MW 3-PIN(3+TAB) TO-220AB RAIL

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WeEn Semiconductors Co., Ltd

TRANS GP BJT NPN 400V 8A 80000MW 3-PIN(3+TAB) TO-220AB RAIL

Technical Specifications

Parameters and characteristics for this part

Specification	PHE13007,127

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	200 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	8
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Supplier Device Package	TO-220AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	350 mV
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Transistor Type	Operating Temperature	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
WeEn Semiconductors Co., Ltd PHE13009,127	12 A	8 hFE	100 µA	400 V	Through Hole	TO-220AB	2 V	80 W	NPN	150 °C	TO-220-3
WeEn Semiconductors Co., Ltd PHE13005X,127	4 A		100 µA	400 V	Through Hole	TO-220F	1 V	26 W	NPN	150 °C	TO-220-3 Full Pack Isolated Tab	10 hFE
WeEn Semiconductors Co., Ltd PHE13005X/01,127					Through Hole	TO-220F					TO-220-3 Full Pack Isolated Tab
WeEn Semiconductors Co., Ltd PHE13005,127	4 A		100 µA	400 V	Through Hole	TO-220AB	1 V	75 W	NPN	150 °C	TO-220-3	10 hFE
WeEn Semiconductors Co., Ltd PHE13007,127	8 A		200 µA	400 V	Through Hole	TO-220AB	350 mV	80 W	NPN	150 °C	TO-220-3		8
WeEn Semiconductors Co., Ltd PHE13003C,126	1.5 A		100 µA	400 V	Through Hole	TO-92-3		2.1 W	NPN	150 °C	TO-226-3 TO-92-3		5
WeEn Semiconductors Co., Ltd PHE13003A,126	1 A		1 mA	400 V	Through Hole	TO-92-3	1.5 V	2.1 W	NPN	150 °C	TO-226-3 TO-92-3		10
WeEn Semiconductors Co., Ltd PHE13003C,412	1.5 A		100 µA	400 V	Through Hole	TO-92-3		2.1 W	NPN	150 °C	TO-226-3 TO-92-3		5

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 400 V 8 A 80 W Through Hole TO-220AB

Technical documentation and resources

No documents available