SFP9640L

Obsolete

ON Semiconductor

MOSFET P-CH 200V 11A TO220-3

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Obsolete

ON Semiconductor

MOSFET P-CH 200V 11A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SFP9640L

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Input Capacitance (Ciss) (Max) @ Vds	1585 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	98 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
ON Semiconductor SFP9640L	P-Channel	11 A	500 mOhm	Through Hole	TO-220-3	-55 °C	150 °C	1585 pF	59 nC	MOSFET (Metal Oxide)	20 V	5 V	98 W	TO-220-3	2 V	200 V
ON Semiconductor SFP9640L	P-Channel	11 A	500 mOhm	Through Hole	TO-220-3	-55 °C	150 °C	1585 pF	59 nC	MOSFET (Metal Oxide)	20 V	5 V	98 W	TO-220-3	2 V	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 200 V 11A (Tc) 98W (Tc) Through Hole TO-220-3

Technical documentation and resources