MOSFET P-CH 200V 11A TO220-3
| Part | FET Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Technology | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Package / Case | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | P-Channel | 11 A | 500 mOhm | Through Hole | TO-220-3 | -55 °C | 150 °C | 1585 pF | 59 nC | MOSFET (Metal Oxide) | 20 V | 5 V | 98 W | TO-220-3 | 2 V | 200 V |
ON Semiconductor | P-Channel | 11 A | 500 mOhm | Through Hole | TO-220-3 | -55 °C | 150 °C | 1585 pF | 59 nC | MOSFET (Metal Oxide) | 20 V | 5 V | 98 W | TO-220-3 | 2 V | 200 V |