GB10SLT12-247D

Obsolete

GeneSiC Semiconductor

DIODE ARR SIC SCHOT 1200V TO247

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Obsolete

GeneSiC Semiconductor

DIODE ARR SIC SCHOT 1200V TO247

Technical Specifications

Parameters and characteristics for this part

Specification	GB10SLT12-247D

Current - Average Rectified (Io) (per Diode)	12 A
Current - Reverse Leakage @ Vr	50 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-247
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.9 V

Part	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Speed	Current - Average Rectified (Io) (per Diode)
GeneSiC Semiconductor GB10SLT12-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	No Recovery Time	2 V	1.2 kV	Surface Mount	TO-252	10 A	0 ns	250 µA	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	520 pF
GeneSiC Semiconductor GB10SLT12-220	TO-220-2	No Recovery Time		1.2 kV	Through Hole	TO-220-2	10 A	0 ns	40 µA	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	520 pF	1.8 V
GeneSiC Semiconductor GB10SLT12-247D	TO-247-3			1.2 kV	Through Hole	TO-247			50 µA	175 ░C	-55 C	SiC (Silicon Carbide) Schottky		1.9 V	1 Pair Common Cathode	200 mA 500 ns	12 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 1200 V 12A Through Hole TO-247-3

Technical documentation and resources

No documents available