GB10SLT12 Series

Catalog

DIODE SIL CARB 1.2KV 10A TO252

Part	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Speed	Current - Average Rectified (Io) (per Diode)
GeneSiC Semiconductor GB10SLT12-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	No Recovery Time	2 V	1.2 kV	Surface Mount	TO-252	10 A	0 ns	250 µA	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	520 pF
GeneSiC Semiconductor GB10SLT12-220	TO-220-2	No Recovery Time		1.2 kV	Through Hole	TO-220-2	10 A	0 ns	40 µA	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	520 pF	1.8 V
GeneSiC Semiconductor GB10SLT12-247D	TO-247-3			1.2 kV	Through Hole	TO-247			50 µA	175 ░C	-55 C	SiC (Silicon Carbide) Schottky		1.9 V	1 Pair Common Cathode	200 mA 500 ns	12 A