TLP628MF(E

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Toshiba Semiconductor and Storage

TR COUPLER; DIP4 WIDE CREEPAGE;

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TLP628MF(E

Active

Toshiba Semiconductor and Storage

TR COUPLER; DIP4 WIDE CREEPAGE;

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TLP628MF(E

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max) [Max]	600 %
Current Transfer Ratio (Min) [Min]	50 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-55 °C
Output Type	1.81 mOhm
Package / Case	4-DIP
Rise / Fall Time (Typ) [custom]	10 µs
Rise / Fall Time (Typ) [custom]	5.5 µs
Supplier Device Package	4-DIP
Turn On / Turn Off Time (Typ)	10 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.25 V
Voltage - Output (Max)	350 V

TLP628 Series

Part	Current Transfer Ratio (Max) [Max]	Voltage - Output (Max)	Vce Saturation (Max) [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Output / Channel	Voltage - Forward (Vf) (Typ)	Supplier Device Package	Output Type	Mounting Type	Package / Case	Number of Channels	Turn On / Turn Off Time (Typ)	Current - DC Forward (If) (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Current Transfer Ratio (Min) [Min]	Package / Case
Toshiba Semiconductor and Storage TLP628M(GB-TP5,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD Gull Wing	1	10 µs	50 mA	-55 °C	125 °C	DC	100 %
Toshiba Semiconductor and Storage TLP628M(LF1,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD	1	10 µs	50 mA	-55 °C	125 °C	DC	50 %	0.3 in 7.62 mm
Toshiba Semiconductor and Storage TLP628M(TP5,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD Gull Wing	1	10 µs	50 mA	-55 °C	125 °C	DC	50 %
Toshiba Semiconductor and Storage TLP628M(GB-LF5,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD Gull Wing	1	10 µs	50 mA	-55 °C	125 °C	DC	100 %
Toshiba Semiconductor and Storage TLP628M(GB,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-DIP	1.81 mOhm	Through Hole	4-DIP (0.300" 7.62mm)	1	10 µs	50 mA	-55 °C	125 °C	DC	100 %
Toshiba Semiconductor and Storage TLP628M(E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-DIP	1.81 mOhm	Through Hole	4-DIP (0.300" 7.62mm)	1	10 µs	50 mA	-55 °C	125 °C	DC	50 %
Toshiba Semiconductor and Storage TLP628M(GB-TP1,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD	1	10 µs	50 mA	-55 °C	125 °C	DC	100 %	0.3 in 7.62 mm
Toshiba Semiconductor and Storage TLP628M(LF5,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD Gull Wing	1	10 µs	50 mA	-55 °C	125 °C	DC	50 %
Toshiba Semiconductor and Storage TLP628MF(E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-DIP	1.81 mOhm	Through Hole	4-DIP	1	10 µs	50 mA	-55 °C	125 °C	DC	50 %
Toshiba Semiconductor and Storage TLP628M(GB-LF1,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD	1	10 µs	50 mA	-55 °C	125 °C	DC	100 %	0.3 in 7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.04
		10	$ 0.63
		100	$ 0.43
		500	$ 0.35
		1000	$ 0.32
		2000	$ 0.30
		5000	$ 0.28
		10000	$ 0.27
		25000	$ 0.26

Description

General part information

TLP628 Series

Optoisolator Transistor Output 5000Vrms 1 Channel 4-DIP

Documents

Technical documentation and resources

No documents available