TLP628 Series

Manufacturer: Toshiba Semiconductor and Storage

Catalog

TR COUPLER; DIP4; ROHS; GULL WIN

Part	Current Transfer Ratio (Max) [Max]	Voltage - Output (Max)	Vce Saturation (Max) [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Output / Channel	Voltage - Forward (Vf) (Typ)	Supplier Device Package	Output Type	Mounting Type	Package / Case	Number of Channels	Turn On / Turn Off Time (Typ)	Current - DC Forward (If) (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Current Transfer Ratio (Min) [Min]	Package / Case
Toshiba Semiconductor and Storage TLP628M(GB-TP5,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD Gull Wing	1	10 µs	50 mA	-55 °C	125 °C	DC	100 %
Toshiba Semiconductor and Storage TLP628M(LF1,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD	1	10 µs	50 mA	-55 °C	125 °C	DC	50 %	0.3 in 7.62 mm
Toshiba Semiconductor and Storage TLP628M(TP5,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD Gull Wing	1	10 µs	50 mA	-55 °C	125 °C	DC	50 %
Toshiba Semiconductor and Storage TLP628M(GB-LF5,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD Gull Wing	1	10 µs	50 mA	-55 °C	125 °C	DC	100 %
Toshiba Semiconductor and Storage TLP628M(GB,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-DIP	1.81 mOhm	Through Hole	4-DIP (0.300" 7.62mm)	1	10 µs	50 mA	-55 °C	125 °C	DC	100 %
Toshiba Semiconductor and Storage TLP628M(E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-DIP	1.81 mOhm	Through Hole	4-DIP (0.300" 7.62mm)	1	10 µs	50 mA	-55 °C	125 °C	DC	50 %
Toshiba Semiconductor and Storage TLP628M(GB-TP1,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD	1	10 µs	50 mA	-55 °C	125 °C	DC	100 %	0.3 in 7.62 mm
Toshiba Semiconductor and Storage TLP628M(LF5,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD Gull Wing	1	10 µs	50 mA	-55 °C	125 °C	DC	50 %
Toshiba Semiconductor and Storage TLP628MF(E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-DIP	1.81 mOhm	Through Hole	4-DIP	1	10 µs	50 mA	-55 °C	125 °C	DC	50 %
Toshiba Semiconductor and Storage TLP628M(GB-LF1,E	600 %	350 V	400 mV	10 µs	5.5 µs	50 mA	1.25 V	4-SMD	1.81 mOhm	Surface Mount	4-SMD	1	10 µs	50 mA	-55 °C	125 °C	DC	100 %	0.3 in 7.62 mm