71256S55DB

Obsolete

Renesas Electronics Corporation

5.0V 32K X 8 ASYNCHRONOUS STATIC RAM

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Documents71256S_L Data Sheet Datasheet

71256S55DB

Obsolete

Renesas Electronics Corporation

5.0V 32K X 8 ASYNCHRONOUS STATIC RAM

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Documents71256S_L Data Sheet Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	71256S55DB

Access Time	55 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	32K x 8
Memory Size	32 KB
Memory Type	Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-55 °C
Package / Case	15.24 mm
Package / Case	0.6 in
Package / Case	28-CDIP
Supplier Device Package	28-CDIP
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	4.5 V
Write Cycle Time - Word, Page [custom]	55 ns
Write Cycle Time - Word, Page [custom]	55 ns

71256L Series

5.0V 32K x 8 Asynchronous Static RAM

Part	Memory Organization	Package / Case	Package / Case	Package / Case	Memory Format	Memory Interface	Supplier Device Package	Memory Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Write Cycle Time - Word, Page	Memory Size	Access Time	Technology	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
Renesas Electronics Corporation 71256S35TDB	32K x 8	7.62 mm	0.3 in	28-CDIP	SRAM	Parallel	28-CDIP	Volatile	4.5 V	5.5 V	35 ns	32 KB	35 ns	SRAM - Asynchronous	Through Hole	125 °C	-55 °C
Renesas Electronics Corporation 71256L70DB	32K x 8	15.24 mm	0.6 in	28-CDIP	SRAM	Parallel	28-CDIP	Volatile	4.5 V	5.5 V		32 KB	70 ns	SRAM - Asynchronous	Through Hole	125 °C	-55 °C
Renesas Electronics Corporation 71256L20YGI	32K x 8		7.62 mm	28-BSOJ	SRAM	Parallel	28-SOJ	Volatile	4.5 V	5.5 V	20 ns	32 KB	20 ns	SRAM - Asynchronous	Surface Mount			0.3 in	85 °C	-40 °C
Renesas Electronics Corporation 71256S55DB	32K x 8	15.24 mm	0.6 in	28-CDIP	SRAM	Parallel	28-CDIP	Volatile	4.5 V	5.5 V		32 KB	55 ns	SRAM - Asynchronous	Through Hole	125 °C	-55 °C				55 ns	55 ns
Renesas Electronics Corporation 71256L25TDB	32K x 8	7.62 mm	0.3 in	28-CDIP	SRAM	Parallel	28-CDIP	Volatile	4.5 V	5.5 V	25 ns	32 KB	25 ns	SRAM - Asynchronous	Through Hole	125 °C	-55 °C
Renesas Electronics Corporation 71256S25YGI8	32K x 8		7.62 mm	28-BSOJ	SRAM	Parallel	28-SOJ	Volatile	4.5 V	5.5 V	25 ns	32 KB	25 ns	SRAM - Asynchronous	Surface Mount			0.3 in	85 °C	-40 °C
Renesas Electronics Corporation 71256L35YGI	32K x 8		7.62 mm	28-BSOJ	SRAM	Parallel	28-SOJ	Volatile	4.5 V	5.5 V	35 ns	32 KB	35 ns	SRAM - Asynchronous	Surface Mount			0.3 in	85 °C	-40 °C
Renesas Electronics Corporation 71256L35TDB	32K x 8	7.62 mm	0.3 in	28-CDIP	SRAM	Parallel	28-CDIP	Volatile	4.5 V	5.5 V	35 ns	32 KB	35 ns	SRAM - Asynchronous	Through Hole	125 °C	-55 °C
Renesas Electronics Corporation 71256L70TDB	32K x 8	7.62 mm	0.3 in	28-CDIP	SRAM	Parallel	28-CDIP	Volatile	4.5 V	5.5 V		32 KB	70 ns	SRAM - Asynchronous	Through Hole	125 °C	-55 °C
Renesas Electronics Corporation 71256S20YGI8	32K x 8		7.62 mm	28-BSOJ	SRAM	Parallel	28-SOJ	Volatile	4.5 V	5.5 V	20 ns	32 KB	20 ns	SRAM - Asynchronous	Surface Mount			0.3 in	85 °C	-40 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71256L Series

The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

Documents

Technical documentation and resources

71256S_L Data Sheet

Datasheet