71256L Series

5.0V 32K x 8 Asynchronous Static RAM

Manufacturer: Renesas Electronics Corporation

Catalog

5.0V 32K x 8 Asynchronous Static RAM

Part	Memory Organization	Package / Case	Package / Case	Package / Case	Memory Format	Memory Interface	Supplier Device Package	Memory Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Write Cycle Time - Word, Page	Memory Size	Access Time	Technology	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
Renesas Electronics Corporation 71256S35TDB	32K x 8	7.62 mm	0.3 in	28-CDIP	SRAM	Parallel	28-CDIP	Volatile	4.5 V	5.5 V	35 ns	32 KB	35 ns	SRAM - Asynchronous	Through Hole	125 °C	-55 °C
Renesas Electronics Corporation 71256L70DB	32K x 8	15.24 mm	0.6 in	28-CDIP	SRAM	Parallel	28-CDIP	Volatile	4.5 V	5.5 V		32 KB	70 ns	SRAM - Asynchronous	Through Hole	125 °C	-55 °C
Renesas Electronics Corporation 71256L20YGI	32K x 8		7.62 mm	28-BSOJ	SRAM	Parallel	28-SOJ	Volatile	4.5 V	5.5 V	20 ns	32 KB	20 ns	SRAM - Asynchronous	Surface Mount			0.3 in	85 °C	-40 °C
Renesas Electronics Corporation 71256S55DB	32K x 8	15.24 mm	0.6 in	28-CDIP	SRAM	Parallel	28-CDIP	Volatile	4.5 V	5.5 V		32 KB	55 ns	SRAM - Asynchronous	Through Hole	125 °C	-55 °C				55 ns	55 ns
Renesas Electronics Corporation 71256L25TDB	32K x 8	7.62 mm	0.3 in	28-CDIP	SRAM	Parallel	28-CDIP	Volatile	4.5 V	5.5 V	25 ns	32 KB	25 ns	SRAM - Asynchronous	Through Hole	125 °C	-55 °C
Renesas Electronics Corporation 71256S25YGI8	32K x 8		7.62 mm	28-BSOJ	SRAM	Parallel	28-SOJ	Volatile	4.5 V	5.5 V	25 ns	32 KB	25 ns	SRAM - Asynchronous	Surface Mount			0.3 in	85 °C	-40 °C
Renesas Electronics Corporation 71256L35YGI	32K x 8		7.62 mm	28-BSOJ	SRAM	Parallel	28-SOJ	Volatile	4.5 V	5.5 V	35 ns	32 KB	35 ns	SRAM - Asynchronous	Surface Mount			0.3 in	85 °C	-40 °C
Renesas Electronics Corporation 71256L35TDB	32K x 8	7.62 mm	0.3 in	28-CDIP	SRAM	Parallel	28-CDIP	Volatile	4.5 V	5.5 V	35 ns	32 KB	35 ns	SRAM - Asynchronous	Through Hole	125 °C	-55 °C
Renesas Electronics Corporation 71256L70TDB	32K x 8	7.62 mm	0.3 in	28-CDIP	SRAM	Parallel	28-CDIP	Volatile	4.5 V	5.5 V		32 KB	70 ns	SRAM - Asynchronous	Through Hole	125 °C	-55 °C
Renesas Electronics Corporation 71256S20YGI8	32K x 8		7.62 mm	28-BSOJ	SRAM	Parallel	28-SOJ	Volatile	4.5 V	5.5 V	20 ns	32 KB	20 ns	SRAM - Asynchronous	Surface Mount			0.3 in	85 °C	-40 °C

Catalog

5.0V 32K x 8 Asynchronous Static RAM

Description

The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.