SS8550DTA

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ON Semiconductor

1.5 A, 25 V PNP EPITAXIAL SILICON BIPLOLAR JUNCTION TRANSISTOR

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ON Semiconductor

1.5 A, 25 V PNP EPITAXIAL SILICON BIPLOLAR JUNCTION TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	SS8550DTA

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

1.5 A, 25 V PNP Epitaxial Silicon Biplolar Junction Transistor

Part	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Package / Case	Frequency - Transition	Mounting Type	Supplier Device Package	Transistor Type	Current - Collector (Ic) (Max) [Max]
ON Semiconductor SS8550BBU	150 °C	85	500 mV	1 W	25 V	100 nA	TO-226-3 TO-92-3	200 MHz	Through Hole	TO-92-3	PNP	1.5 A
ON Semiconductor SS8550DTA	150 °C	160	500 mV	1 W	25 V	100 nA	TO-226-3 TO-92-3	200 MHz	Through Hole	TO-92-3	PNP	1.5 A
ON Semiconductor SS8550CBU	150 °C	120	500 mV	1 W	25 V	100 nA	TO-226-3 TO-92-3	200 MHz	Through Hole	TO-92-3	PNP	1.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

1.5 A, 25 V PNP Epitaxial Silicon Biplolar Junction Transistor

Technical documentation and resources