SS8550 Series

1.5 A, 25 V PNP Epitaxial Silicon Biplolar Junction Transistor

Catalog

1.5 A, 25 V PNP Epitaxial Silicon Biplolar Junction Transistor

Part	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Package / Case	Frequency - Transition	Mounting Type	Supplier Device Package	Transistor Type	Current - Collector (Ic) (Max) [Max]
ON Semiconductor SS8550BBU	150 °C	85	500 mV	1 W	25 V	100 nA	TO-226-3 TO-92-3	200 MHz	Through Hole	TO-92-3	PNP	1.5 A
ON Semiconductor SS8550DTA	150 °C	160	500 mV	1 W	25 V	100 nA	TO-226-3 TO-92-3	200 MHz	Through Hole	TO-92-3	PNP	1.5 A
ON Semiconductor SS8550CBU	150 °C	120	500 mV	1 W	25 V	100 nA	TO-226-3 TO-92-3	200 MHz	Through Hole	TO-92-3	PNP	1.5 A

1.5 A, 25 V PNP Epitaxial Silicon Biplolar Junction Transistor

• Complementary to SS8050

• Collector Current : IC= 1.5 A

• Power Dissipation, PD= 1 W (TC= 25°C )

1.5 A, 25 V PNP Epitaxial Silicon Biplolar Junction Transistor